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aip.orgtrue10.1063/1.48979522014-10-16Effect of electrical stress on Au/Pb (Zr0.52Ti0.48) O3/TiOxNy/Si gate stack for reliability analysis of ferroelectric field effect transistors
10.1063/1.4897952http://dx.doi.org/10.1063/1.4897952
doi:10.1063/1.4897952Effect of electrical stress on Au/Pb (Zr0.52Ti0.48) O3/TiOxNy/Si gate stack for reliability analysis of ferroelectric field effect transistorsRobin KhoslaDeepak K. SharmaKunal MondalSatinder K. Sharmaferroelectric storagefield effect transistorsgoldlead compoundsMFIS structuresreliabilitysilicontitanium compoundsX-ray diffraction
2014-10-16trueaip.org10.1063/1.4897952
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