%PDF-1.4
%
1 0 obj
<>
endobj
2 0 obj
<2O3/SiO2/Si, Gate Stack for Emerging Embedded Memories)>>
endobj
3 0 obj
<>stream
IEEE
IEEE Transactions on Device and Materials Reliability;2017;17;1;10.1109/TDMR.2017.2659760
Charge trapping
high-κ
aluminium oxides (Al₂O₃)
atomic layer deposition (ALD)
Kelvin probe force microscopy (KPFM)
memory
Charge Trapping Analysis of Metal/Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub>/Si, Gate Stack for Emerging Embedded Memories
Robin Khosla
Erlend Granbo Rolseth
Pawan Kumar
Senthil Srinivasan Vadakupudhupalayam
Satinder K. Sharma
Jorg Schulze
endstream
endobj
4 0 obj
<>stream
x+ |
endstream
endobj
5 0 obj
<>stream
x1k0+nLi 6\(%
[Nd=WzJoz6t
nJ'[7jșu]JnX,EGן#>]q\u9fˮb`;3G.AojU+XVM]7mq'W.Kxvõ\5I{
B^
endstream
endobj
6 0 obj
<>stream
x+ |
endstream
endobj
7 0 obj
<>stream
x1k0+nL iIm<J2dzLI}p}aGzppXCTx"u'U<9?ûΆaN6Ifm ْ8s9E[w6<>9cjʪ:~yD4
h&!LXj4iGsBf
endstream
endobj
8 0 obj
<>stream
x+ |
endstream
endobj
9 0 obj
<>stream
xj0sL I?>8PBZrEr k]iMHJ|@?6BTx&
U<HY.ݯ]gC0'$p6΄lIbmw |iѶćɻ|Mڮ*a0D6M9IqH0J/:Bc
endstream
endobj
10 0 obj
<>stream
x+ |
endstream
endobj
11 0 obj
<>stream
x1k0+nL m<JR2dzLI}r}aGzppXCTx"
Ϫxyw#-^g9stw
)Ül5;%q2 ms`ϧ+%&
l7x6}>s,zUU #Pe]Uuo!i&&!LXj4}юn
TBa
endstream
endobj
12 0 obj
<>stream
x+ |
endstream
endobj
13 0 obj
<>stream
x1k0+nL I 6\!
[Nd=WzJpoztr
J</AY/G7b;˕=lHdsdцޙ-Y,=_8/V؛+sPUUV%@uUՙ#ڦip