Portrait of Dr. Robin Khosla

Dr. Robin Khosla

Assistant Professor | School of Computing and Electrical Engineering

Welcome! I am an Assistant Professor at Indian Institute of Technology (IIT) Mandi. Our research group explores the area of micro/nano-electronics focused on Materials for Semiconductors [such as Semiconductors (Si, Ge, 2D-TMD), Insulators (High-k Dielectrics), Ferroelectrics, Metals], Semiconductor Devices [such as Transistor, Memory (Flash, FeRAM, ReRAM), Solar Cells, Photodetectors, Micro-Sensors, Josephson Junctions] and Embedded/IoT Systems. We are dedicated to develop high performance, reliable, and energy-efficient solutions for next-generation nano-electronics.

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    Background & Experience

    Education

    • 2021 - P.D.F, University of Stuttgart (TU), Stuttgart, Germany
    • 2017 - Ph.D., Indian Institute of Technology (IIT) Mandi, Mandi, Himachal Pradesh, India
    • 2013 - M.Tech., Punjab Technical University (C-DAC), Mohali, Punjab, India
    • 2011 - B.Tech., Punjab Technical University, Jalandhar, Punjab, India

    Work Experience

    • Jul 2023 - Present: Assistant Professor-I, IIT Mandi, Himachal Pradesh, India
    • Jul 2022 - Jul 2023: Assistant Professor-I, NIT Silchar, Assam, India
    • Sep 2021 - Jul 2022: Assistant Professor-II, NIT Silchar, Assam, India
    • Aug 2019 - Sep 2021: Alexander von Humboldt Post Doc Fellow, University of Stuttgart, Germany
    • Jun 2018 - Jul 2019: Assistant Professor-II, NIT Silchar, Assam, India
    • Sep 2017 - Jun 2018: Research Associate, IIT Mandi, Himachal Pradesh, India

    Awards & Honours

    • 2025: won the ANRF Prime Minister Early Career Research Grant (ECRG)
    • 2022: elevated to IEEE Senior Member
    • 2018: awarded the Alexander von Humboldt Research Fellowship for Postdoctoral Researchers, Germany

    Research Focus

    Research Interests

    Micro/Nano Electronics Micro/Nano Fabrication Quantum Electronics Materials for Semiconductors Semiconductor Devices Non-Volatile Memories MEMS & Micro-Sensors IoT & Embedded Systems

    Research Projects Granted

    • INAE (2025-2028): "Development of eco-friendly, flexible perovskite ABX3 (A = Fa, Cs; B = Ge, Sn; C = Cl, Br, I) quantum dot-based solar cell devices with NiO hole transport layer & Zn(OxSy) electron transport layer," Role: PI (INR 45.5 Lakhs)
    • ANRF PMECRG (2025-2028): "Development of CMOS-compatible ferroelectric HfZrOx and AlScN based semiconductor devices for non-volatile memory applications," Role: PI (INR 64.59 Lakhs)
    • DAE BRNS (2025-2028): "Development of Josephson Junction based devices and integration with resonators for quantum computing applications," Role: PI (INR 41.09 Lakhs)
    • ISRO (2025-2027): "Development of coating recipes using Atomic layer thin film deposition (ALD) for coating on Ball bearing components," Role: Co-PI (INR 33.05 Lakhs)
    • EMD MERCK (2024-2027): "Design and Development of Hybrid Metal Complexes Based Resist for Next Generation EUV Technology," Role: Co-PI (INR 2.01 Crores)
    • iHub & HCI Foundation (2024-2025): "Integration of digital olfaction with a television," Role: Co-PI (INR 1.07 Crores)
    • IIT Mandi Seed Grant (2023-2025): "Micro/Nano-electronic devices development for switching and storage applications," Role: PI (INR 15 Lakhs)

    Publications

    Patents

    1. M. Chauhan, A. Dhir, R. Khosla, B. Mondal, R. Singh, S. K. Sharma, R. Dammel, R. Kanjolia, "Indium Metal Organic Complex as EUV Resists," US Patent, App. No. 63/734,855, 2024
    2. T. Goel, R. Sharma, R. Khosla, R. Murugan, "System for the early detection of Alzheimer's disease," German Design Patent, IPC: G16 50/20, no. 202023100083.5, 2023
    3. R. Khosla, K. Guha, T. Goel, R. Khosla, A. J. Borah, R. P. Chowdhury, D. Patgiri, R. Borah, "A Smart agriculture system for farm environment monitoring and crop selection using IoT and Machine Learning," German Design Patent, IPC: G06Q50/02, no. 202023100001, 2023

    Journal Publications

    1. S.-A. Chen, Z.-L. Tseng, C.-C. Hsu, R. Khosla, M.-T. Yen, S.-H. Chang, "Emission-Controlled FAPBI3-xBRx Perovskite Quantum Dots via TOAB-induced ligand anion exchange," Surface Review and Letters, pp. 2641011, 2026. [DOI]
    2. S. Gorsi, D. Dhiman, D. Rambabu, K. Robeyns, R. Khosla, and A. Dhir, "Excited-state AIE material for differential recognition of toxic hair color ingredients: towards functional device applications," J. Mater. Chem. C, vol. 14, pp. 1579, 2026.[DOI]
    3. Z.-L. Tseng, K. Uma, C.-H. Wu, T.-W. Shen, R. Khosla, X.-J. Guan, and W.-K. Hung, "Diverse Bimetallic MOF Polymorphs for the Degradation of Pollutants/Antibiotics and Quantum Dot Integration for Enhanced WLED Performance," Alexandria Engineering Journal, vol.130, pp.35, 2025. [DOI]
    4. A. K. Yadav, S. Anand, and R. Khosla, "Impact of Gate Dielectric and Doping Concentration on the Si Fork-Sheet FET for Next Generation CMOS Technology," Materials Science & Engineering B, vol. 322, pp. 118655, 2025. [DOI]
    5. S. Mourya, K. Uma, S. K. Sharma, T. -W. Shen, R. Khosla, L. -C. Chen, and Z. L. Tseng, "Unveiling DDAB-Driven Surface Passivation and Charge Dynamics in CsPb(Br0.8I0.2)3 Quantum Dots: Interactions with Anthraquinone and Benzoquinone," Materials Science in Semiconductor Processing, vol.200, pp.109901, 2025.[DOI]
    6. S. Mattaparthi, S. K. S. Bonal, Z. L. Tseng, and R. Khosla, "Numerical assessment of CsXY3 (X=Ge, Sn; Y=Cl, Br, I) perovskites unified with NiO & Zn(O0.25S0.75) for solar cell applications," physica status solidi (a) applications and materials science, 2500209, 2025. [DOI]
    7. A. K. Yadav, C. V. Kumar, G. S. Baghel, and R. Khosla, "Performance and Reliability Assessment of Source Work Function Engineered Charge Plasma based Al/HfO2/Al2O3/Ge, Double Gate TFET," Engineering Research Express, vol. 6, pp. 025323, 2024. [DOI]
    8. A. K. Yadav, S. P. Malik, G. S. Baghel, and R. Khosla, "Influence of Charge Traps on Charge Plasma-Germanium Double-Gate TFET for RF/Analog & low-power switching applications," Microelectronic Reliability, vol.153, pp.115312, 2024.[DOI]
    9. C. V. Kumar, A. K. Yadav, A. Deka, and R. Khosla, "Investigating the Effects of Doping Gradient, Trap Charges, and Temperature on Ge Vertical TFET for Low Power Switching and Analog Applications," Material Science and Engineering B, vol.299, pp.116996, 2024.[DOI]
    10. S. Mattaparthi, D. K. Sinha, A. Bhura, and R. Khosla, "Design of an eco-friendly perovskite Au/NiO/FASnI3/ZnO0.25S0.75/FTO, device structure for solar cell applications using SCAPS-1D," Results in Optics, vol. 12, pp. 100444, 2023.[DOI]
    11. S. Sharma, S. Das, R. Khosla, H. Shrimali and S. K. Sharma, "Two-Dimensional Van Der Waals Hafnium Disulfide and Zirconium Oxide-Based Micro-Interdigitated Electrodes Transistors," IEEE Transactions on Electron Devices, vol. 70, no. 4, pp. 1520-1526, 2023. [DOI]
    12. S. Choudhary, D. Schwarz, H. S. Funk, D. Weisshaupt, R. Khosla, S. K. Sharma, and J. Schulze, "A Steep Slope MBE Grown thin p-Ge Channel FETs on Bulk Ge-on-Si using HZO internal Voltage Amplification," IEEE Transactions on Electron Devices, vol. 69, pp.2725, 2022. [DOI]
    13. S. Rathaur, R. Khosla and S. K. Sharma, Metal (Pt) / Ferroelectric (SrBi2Ta2O9) / Insulator (La2O3) / Semiconductor (Si), MFIS structures for non-volatile memory applications, Appl. Phys. Lett., vol. 119, pp. 063505, 2021.[DOI]
    14. R. Khosla and S. K. Sharma, "Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices," ACS Applied Electronic Materials, vol. 3 (7), pp. 2862-2897, 2021. [DOI]
    15. R. Khosla, D. Schwarz, H. S. Funk, K. Guguieva, and J. Schulze, "High-quality Remote Plasma Enhanced Atomic Layer Deposition of Aluminum Oxide thin films for nanoelectronics applications," Solid State Electronics, vol. 185, pp. 108027, 2021. [DOI]
    16. S. Choudhary, D. Schwarz, H. S. Funk, R. Khosla, S. K. Sharma and J. Schulze, "Impact of Charge Trapping On Epitaxial p-Ge-on-p-Si and HfO2 Based Al/HfO2/p-Ge-on-p-Si/Al Structures Using Kelvin Probe Force Microscopy and Constant Voltage Stress," IEEE Transactions on Nanotechnology, vol. 20, pp. 346-355, 2021.[DOI]
    17. M. Jangra, D. S. Arya, R. Khosla, and S. K. Sharma, "Maskless lithography: an approach to SU-8 based sensitive and high-g Z-axis polymer MEMS accelerometer", Microsyst Technol, vol. 27, pp. 2925-2934, 2021.[DOI]
    18. P. P. Goswami, R. Khosla, and B. Bhowmick, "RF analysis and temperature characterisation of pocket doped L-shaped gate Tunnel FET," Applied Physics A, vol. 125, pp. 733, 2019.[DOI]
    19. S. Sharma, S. Das, R. Khosla, H. Shrimali and S. K. Sharma, "Realization and Performance Analysis of Facile-Processed u-IDE-Based Multilayer HfS2/HfO2 Transistors," IEEE Transactions on Electron Devices, vol. 66, no. 7, pp. 3236-3241, 2019.[DOI]
    20. S. Sharma, S. Das, R. Khosla, S. K. Sharma, and H. Shrimali, "Highly UV sensitive Sn Nanoparticles blended with polyaniline onto Micro-Interdigitated Electrode Array for UV-C detection applications," Journal of Materials Science: Materials in Electronics, vol. 30, pp. 7534, 2019. [DOI]
    21. S. Sharma, R. Khosla, S. Das, H. Shrimali, and S. K. Sharma, "High Performance CSA-PANI based Organic Phototransistor by Elastomer Gratings," Organic Electronics, vol. 57, pp. 14-20, 2018.[DOI]
    22. R. Khosla and S. K. Sharma, "Frequency Dispersion and Dielectric Relaxation in Post Deposition Annealed high-k Erbium Oxide (Er2O3) Metal-Oxide-Semiconductor Capacitors," Journal of Vacuum Science & Technology B, vol. 36, no. 1, pp. 012201, 2018.[DOI]
    23. J. S. Malhotra, A. K. Singh, R. Khosla, S. K. Sharma, G. Sharma, and S. Kumar, "Investigations on structural, optical and magnetic properties of Fe and Dy co-doped ZnO nanoparticles," Journal of Materials Science: Materials in Electronics, vol.29, pp.3850, 2018.[DOI]
    24. S. Sharma. R. Khosla, H. Shrimali, and S. K. Sharma, "Fluorine-Chlorine co-doped TiO2/CSA doped Polyaniline heterostructure for UV detection applications," Sensor and Actuators A, vol. 261, pp. 94, 2017.[DOI]
    25. P. Kumar, R. Khosla, M. Soni, D. Deva and S. K. Sharma, "A highly sensitive, flexible SERS sensor for Malachite green detection based on Ag decorated microstructured PDMS substrate fabricated from Taro leaf as template," Sensors & Actuators B, vol. 246, pp. 477, 2017.[DOI]
    26. R. Khosla, E. G. Rolseth, P. Kumar, S. S. Vadakupudhupalayam, S. K. Sharma and J. Schulze, "Charge Trapping Analysis of Metal/Al2O3/SiO2/Si, Gate Stack for Emerging Embedded Memories," IEEE Transactions on Device and Materials Reliability, vol. 17, no. 1, pp. 80-89, 2017.[DOI]
    27. P. Kumar, R. Khosla, and S. K. Sharma, "Nanoscale investigations: Surface potential of rare-earth oxide (Re2O3) thin films by kelvin probe force microscopy for next generation CMOS technology," Surfaces and Interfaces, vol. 4, pp. 69, 2016.[DOI]
    28. M. Soni, T. Arora, R. Khosla, P. Kumar, A. Soni and S. K. Sharma, "Integration of Highly Sensitive Oxygenated Graphene With Aluminum Micro-Interdigitated Electrode Array Based Molecular Sensor for Detection of Aqueous Fluoride Anions," IEEE Sensors Journal, vol.16, no.6, pp.1524-1531, 2016.[DOI]
    29. R. Khosla, P. Kumar, and S. K. Sharma, "Charge Trapping and Decay Mechanism in Post Deposition Annealed Er2O3 MOS Capacitors by Nanoscopic and Macroscopic Characterization," IEEE Transactions on Device and Materials Reliability, vol.15, no.4, pp.610-616, 2015.[DOI]
    30. D. K. Sharma, R. Khosla and S. K. Sharma, "Multilevel metal/Pb(Zr0.52Ti0.48)O3/TiOxNy/Si for next generation FeRAM technology node," Solid-State Electronics, vol. 111, pp. 42, 2015.[DOI]
    31. R. Khosla, D. K. Sharma, and S. K. Sharma, "Effect of electrical stress on Au/Pb(Zr0.52Ti0.48)O3/TiOxNy/Si gate stack for reliability analysis of ferroelectric field effect transistors," Appl. Phys. Lett., vol. 105, pp. 152907, 2014. [DOI]

    Conference Publications

    1. M. Chauhan, K. Palit, A. Joshi, R. Singh, A. Dhir, R. Khosla, B. Mondal, S. K Sharma, R. Dammel, "Hybrid metal-organic clusters resist for next-generation high-NA EUV lithography," Proc. SPIE, Advances in Patterning Materials and Processes XLIII, San Jose, California, United States, vol. 13983, pp. 627-633, Apr 2026.[DOI]
    2. D. Dhiman, S. Mondal, S. R. Chowdhury, R. Khosla, "SnOx nanostructures micro-interdigitaded electrodes structure sensor for artificial olfaction systems," IEEE 7th International Conference on Emerging Electronics (ICEE), Bengaluru, India, 2025, pp. 1-4. [DOI]
    3. M. Chauhan, P. Kumar, R. Singh, A. Dhir, R. Khosla, B. Mondal, S. K. Sharma, R. Dammel, R. Kanjolia, "High-performance metal organic cluster resists for high-NA extreme ultraviolet lithography," Proc. SPIE, Advances in Patterning Materials and Processes XLII, San Jose, California, United States, vol. 13428, pp. 40-47, Apr 2025. [DOI]
    4. A. K. Yadav, S. Anand, and R. Khosla, "Investigation of TiN/HfO2/SiO2/Si gate stack-based Forksheet Transistor for Next Generation CMOS Technology," National Conference on Emerging Micro/Nano-Electronics: Devices, Technology & VLSI Design (EMNE), Kurukshetra, Nov 2024.
    5. A. K. Yadav, S. P. Malik, G . S. Baghel, and R. Khosla, "Current Status and Future Perspectives of Tunnel Field Effect Transistors for Low Power Switching Applications," 3rd International Conference on Micro and Nanoelectronics Devices, Circuits and Systems, NIT Silchar, Assam, India, vol. 1067, Springer, Singapore, pp. 159-177, 2024.[DOI]
    6. S. P. Malik, A. K. Yadav, and R. Khosla, "Design and Simulation of Si and Ge Double-Gate Tunnel Field-Effect Transistors with High-k Al2O3 Gate Dielectric: DC and RF Analysis," 2nd International Conference on Micro and Nanoelectronics Devices, Circuits and Systems, NIT Silchar, Assam, India, vol. 904. Springer, Singapore, pp. 215-226, 2023.[DOI]
    7. M. Jangra, D. S. Arya, R. Khosla, and S. K. Sharma, "Design and Simulation of Capacitive Z-axis MEMS Accelerometers using SU-8, PolySi, Si3N4, and SiC based structural materials," IEEE 5th International Conference on Emerging Electronics (ICEE), IIT Delhi, India, Nov 2020.[DOI]
    8. R. Khosla and S. K. Sharma, "Impact of Au/Al metal electrodes on Metal/PZT/TiOxNy/Si, MFIS structure for next-generation FeRAM," 3rd ISSC National Conference, ISRO-SCL, Mohali, Punjab, India, pp. 550, 2017.
    9. P. Kumar, M. Soni, T. Arora, R. Khosla and S. K. Sharma, "Highly Sensitive SERS Sensors Based on Ag coated Self Assembled Colloidal Crystals for Detection of Contaminants in Water," International Conference on Materials Science & Technology (ICMST), Delhi University, India, Mar 2016.
    10. B. Singh, R. Khosla, and S. Bala, "Implementation of Efficient Object Detection Algorithm on FPGA," Advancements in Engineering, Technology and Management (AETM), Thailand, vol. 6, pp. 22, 2015.[DOI]
    11. D. K. Sharma, R. Khosla, and S. K. Sharma, "High performance Au/PZT/TiOxNy/Si MFIS structure for next generation ferroelectric memory applications," AIP Conf. Proc., HPU Shimla, India, vol. 1661, pp. 060007, 2015.[DOI]
    12. R. Khosla, D. K. Sharma, and S. K. Sharma, "Reliability evaluation of erbium oxide thin films as gate dielectric for CMOS technology," Int. Conf. on Multifunctional Materials, Structures, and Applications (ICMMSA), MNIT Allahabad, India, pp. 192, 2014.
    13. R. Khosla and B. Singh, "Implementation of efficient image processing algorithm on FPGA," IEEE Int. Conf. on Machine Intelligence Research and Advancement (ICMIRA), Katra, Jammu, India, pp. 335-339, 2013.[DOI]

    Book Chapters

    1. A. K. Yadav, S. P. Malik, G. S. Baghel, and R. Khosla, "Current Status and Future Perspectives of Tunnel Field Effect Transistors for Low Power Switching Applications," Micro and Nanoelectronics Devices, Circuits and Systems. Lecture Notes in Electrical Engineering, vol. 1067, Springer, Singapore, pp. 159-177, 2024.
    2. S. P. Malik, A. K. Yadav, and R. Khosla, "Design and Simulation of Si and Ge Double-Gate Tunnel Field-Effect Transistors with High-k Al2O3 Gate Dielectric: DC and RF Analysis," Micro and Nanoelectronics Devices, Circuits and Systems, Lecture Notes in Electrical Engineering, vol. 904. Springer, Singapore, pp. 215-226, 2023.

    Teaching

    Current
    EE-311 · VL-201

    Device Electronics for IC's

    Semiconductor physics, p-n junctions, metal–semiconductor contacts, bipolar transistors and MOSFETs.

    Credits
    3-0-0-3
    Prerequisite
    IC-161
    Core for
    B.Tech. Electrical (EE-311) & MEVLSI (VL-201) Eng.
    VL-311

    CMOS Processing

    Semiconductor Tech.— cleanroom, vacuum, oxidation, lithography, etching & metallization with hands-on.

    Credits
    3-0-2-4 (with lab)
    Prerequisite
    EE-311
    Core for
    B.Tech. MEVLSI Engineering
    EE-211

    Analog Circuit Design

    BJT/MOS amplifiers, current mirrors, feedback, oscillators, PLLs and data converters with labwork.

    Credits
    2-0-2-3 (with lab)
    Prerequisite
    IC-161
    Core for
    B.Tech. Electrical Engineering

    Administrative Responsibilities

    • 2025-28: Coordinator - Centre for Design & Fabrication of Electronic Devices (C4DFED)
    • 2025-26: Chairperson - SCEE School Teaching Assistants and Room Allotment (STAR) Committee
    • 2023-27: Faculty Advisor - B.Tech. (Microelectronics & VLSI Engineering) 2023-27 Batch
    • 2023-25: Co-Advisor - National Service Scheme (NSS) Committee
    • 2023-25: Assistant Warden - Prashar Hostel

    Open Positions / Prospective Students

    Highly motivated Ph.D., M.Tech., and B.Tech. students with a strong background or keen interest in Micro/Nano Electronics and Semiconductor Device Technology interested in joining our research group can send an e-mail to robin@iitmandi.ac.in with attached CV and a statement of your research interests. Kindly use the subject line: "Application for Research Position".

    Contact Information

    Address: A17.02.22
    School of Computing and Electrical Engineering (SCEE)
    Indian Institute of Technology (IIT) Mandi
    Kamand, Mandi, Himachal Pradesh, India - 175075
    Email: robin@iitmandi.ac.in
    Phone: +91-1905-267221
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