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Publications

Patents

  1. Ankush Bag, Palash Das, Rahul Kumar, Partha Mukhopadhyay and Dhrubes Biswas, “Double Quantum Well Enhancement Mode Nitride HEMT”, Indian Patent Application No.: 0277KOL2015 dated March 13, 2015.

Journals

    2021

  1. Manoj Kumar Yadav, Arnab Mondal, Satinder K. Sharma, and Ankush Bag, “ Probing Interface Trapping Characteristics of Au/β-Ga2O3 Schottky Barrier Diodes on Si (100) ”, IEEE Transactions on Device and Materials Reliability (accepted).

  2. Arpit Nandi, Kanchan Singh Rana, and Ankush Bag, “ Design and Analysis of P-GaN/N-Ga2O3 based Junction Barrier Schottky Diodes ”, IEEE Transaction on Electron Devices (accepted)

  3. Manoj Kumar Yadav, Arnab Mondal, Satinder K. Sharma, and Ankush Bag, “ Substrate Orientation Dependent Current Transport Mechanisms in β-Ga2O3/Si based Schottky Barrier Diodes ”, Journal of Vacuum Science and Technology A 39 (2021) 033203.

  4. Nisika, Kulwinder Kaur, Manoj Yadav, Ankush Bag and Mukesh Kumar, “ Suppression of interfacial oxygen vacancies for efficient charge extraction at CZTS/TiO2 heterojunction ”, Applied Physics Letters 118 (2021) 041601.

  5. Ashish Kumar, Arpit Nandi, and Ankush Bag, “ Exceptional Responsivity (>6 kA/W) and Dark-current (<70 fA) Tradeoff of n-Ga2O3/p-CuO Quasi-Heterojunction based Deep UV Photodetector ”, IEEE Transaction on Electron Devices, 68 (2021) 144-151.

    6. 2020

  6. Manoj Kumar Yadav, Satinder K. Sharma, and Ankush Bag, “ Evaluation of Diode Characteristics for Fully Vertical β-Ga2O3 on Silicon (100) Substrate ”, Journal of Materials Science: Materials in Electronics, 31 (2020) 13845.

  7. Arnab Mondal, Manoj Kumar Yadav, and Ankush Bag, “ Transition from Thin Film to Nanostructure in Low Pressure Chemical Vapor Deposition Growth of β-Ga2O3: Impact of Metal Gallium Source ”, Thin Solid Films 709 (2020) 138234.

  8. Manoj Kumar Yadav, Arnab Mondal, Shivangi Shringi,Satinder K. Sharma, and Ankush Bag, “ Performance Enhancement of ?-Ga2O3 on Si (100) based Schottky Barrier Diodes using RESURF ”, Semiconductor Science and Technology (accepted).

  9. Ashish Kumar, and Ankush Bag, “ Ultra-High Responsivity (>12.34 kA/W) of Ga-In Bimetallic Oxide Nanowires Based deep-UV Photodetector ”, Nanotechnology, 31(2020) 304001.

  10. Arnab Mondal, Manoj Kumar Yadav, Shivangi Shringi, and Ankush Bag, “ Extremely Low Dark Current and Detection Range Extension of Ga2O3 UV Photodetector using Sn Alloyed Nanostructures ”, Nanotechnology, 31(2020) 294002.

  11. Manoj Kumar Yadav, Arnab Mondal, Subhashis Das, Satinder K. Sharma, and Ankush Bag, “ Impact of Annealing Temperature on Band-alignment of PLD Grown Ga2O3/Si (100) Heterointerface ”, Journal of Alloys and Compounds,815(2020) 153052.

    12. 2019

  12. Ashish Kumar, and Ankush Bag, “ High Responsivity of Quasi-2D Electrospun β-Ga2O3 based Deep-UV Photodetectors ”, IEEE Photonics Technology Letters,31 (2019) 619-622.

    13. 2018

  13. Ankush Bag, Subhashis Das, Rahul Kumar, and Dhrubes Biswas, “ Evolution of Lateral V-defects on InGaN/GaN on Si(111) during PAMBE: A Role of Strain on Defect Kinetics ”, CrystEngComm, 20 (2018) 4151-4163.

  14. Ankush Bag, Subhashis Das, Partha Mukhopadhyay, and Dhrubes Biswas, “ Observation and analysis of kink effect during drain current inception of GaN HEMT ”, Superlattices and Microstructures, 120 (2018)101-107.

  15. Saptarsi Ghosh, Subhashis Das, Syed Mukulika Dinara,Ankush Bag, Apurba Chakraborty, Partha Mukhopadhyay, Sanjay Kumar Jana , and Dhrubes Biswas, “ OFF-state Leakage and Current Collapse in AlGaN/GaN HEMTs: a Virtual Gate Induced by Dislocations ”, IEEE Transactions on Electron Devices, 65 (2018) 1333-1339.

  16. Apurba Chakraborty, Ankush Bag, Partha Mukhopadhyay, Saptarsi Ghosh, and Dhrubes Biswas, “ Elimination of V-shaped pits in InGaN/GaN/AlN/GaN heterostructure by metal modulation growth technique ”, Semiconductor Science and Technology, 33 (2018) 036009.

  17. Apurba Chakraborty, Saptarsi Ghosh, Partha Mukhopadhyay, Subhashis Das, Ankush Bag, and Dhrubes Biswas, “ Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis ”, Superlattices and Microstructures, 113 (2018) 147 - 152 .

    18. 2017

  18. Subhashis Das, Saptarsi Ghosh, Rahul Kumar, Ankush Bag, and Dhrubes Biswas, “ Highly Sensitive Acetone Sensor Based on Pd/AlGaN/GaN Resistive Device Grown by Plasma-assisted Molecular Beam Epitaxy ”, IEEE Transaction on Electron Devices, 64 (2017)4650 - 4656.

  19. Subhankar Majumdar, Ankush Bag, and Dhrubes Biswas, “ Comparative Analysis of Parameter Extraction Techniques for AlGaN/GaN HEMT on silicon/sapphire substrate ”, Microelectronics Reliability, 78 (2017) 389-395.

  20. Ankush Bag, Subhankar Majumdar, Subhashis Das and Dhrubes Biswas, “Probing InGaN immiscibility at AlGaN/InGaN heterointerface on silicon (111) through two-step capacitance-voltage and conductance-voltage profiles ”, Materials & Design, 133 (2017) 176-185.

  21. Subhashis Das, Ankush Bag, Rahul Kumar and Dhrubes Biswas, “Fast Response (7.6s) Acetone Sensing by InGaN/GaN on Si (111) at 373 K ”, IEEE Electron Device Letters, 38 (2017) 386-386.

    22. 2016

  22. Ankush Bag, Subhashis Das and Dhrubes Biswas, “Observation of in-situ reciprocal lattice evolution of AlGaN/InGaN on Si (111) through GaN and AlN interlayers by RHEED and Reflectance”, Physica status solidi C 13 (2016) 186-189.

  23. Ankush Bag, Palash Das, Saptarsi Ghosh, Partha Mukhopadhyay, Syed Mukulika Dinara, Rahul Kumar, Apurba Chakraborty and Dhrubes Biswas, “Fowler-Nordheim Tunneling Contribution in AlGaN/GaN on Si (111) Schottky Current”, IETE Technical Review, 33 (2016) 7-10.

  24. Apurba Chakraborty, Saptarsi Ghosh, Partha Mukhopadhyay, Sanjay K Jana, Syed Mukulika Dinara, Ankush Bag, Mihir K Mahata, Rahul Kumar, Subhashis Das, Palash Das, Dhrubes Biswas, “Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure”, Electronics Material Letters, 12, (2016), 232-236.

  25. Rahul Kumar, Ankush Bag, Partha Mukhopadhyay, Subhashis Das, and Dhrubes Biswas, “Investigation of Cross-Hatch Surface and Study of Anisotropic Relaxation and Dislocation on InGaAs on GaAs (001)”, Electronics Material Letters, 12, (2016), 356-364.

    26. 2015

  26. Ankush Bag, Rahul Kumar, Partha Mukhopadhyay, Mihir K. Mahata, Apurba Chakraborty, Saptarsi Ghosh, Sanjay K. Jana, and Dhrubes Biswas “Evolution and Analysis of Nitride Surface and Interfaces by Statistical Techniques: A Correlation with RHEED through Kinetic Roughening”, Electronics Material Letters, 11 (2015) 707-716.

  27. Ankush Bag, Palash Das, Rahul Kumar, Partha Mukhopadhyay, Sanjib Kabi, Shubhankar Majumder and Dhrubes Biswas, “2DEG Modulation in Double Quantum Well Enhancement Mode Nitride HEMT”, Physica E: Low-Dimensional Systems and Nanostructures, 74 (2015) 59 - 64.

  28. Rahul Kumar, Ankush Bag, Partha Mukhopadhyay, Subhashis Das and Dhrubes Biswas, “Comparison of Different Grading Schemes in InGaAs Metamorphic Buffers on GaAs Substrate: Tilt Dependence on Cross-Hatch Irregularities” Applied Surface Science, 357 (2015) 922-930.

  29. Partha Mukhopadhyay, Utsav Banerjee, Ankush Bag, Saptarsi Ghosh, Dhrubes Biswas, “Influence of growth morphology on electrical and thermal modeling of AlGaN/GaN HEMT on sapphire and silicon”, Solid-State Electronics 104 (2015) 101–108.

  30. Rahul Kumar, P. Mukhopadhyay, Ankush Bag, S. Kr. Jana, A. Chakraborty, S. Das, M. Kr. Mahata, D. Biswas, “Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness”, Applied Surface Science 324 (2015) 304–309.

  31. Partha Mukhopadhyay, Rahul Kumar, Saptarsi Ghosh, Apurba Chakraborty, Ankush Bag, Sanjib Kabi, Pallab Banerji, Dhrubes Biswas, “A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si(1 0 0)”, Journal of Crystal Growth 418 (2015) 138–144.

  32. Shubhankar Majumdar, Ankush Bag, and Dhrubes Biswas, “Implementation of VerilogA GaN HEMT Model To Design RF Switch”, Microwave and Optical Technology Letters 57 (2015) 1765-1768.

  33. Syed Mukulika Dinara, Saptarsi Ghosh, Nripendra N. Halder, Ankush Bag, Sekhar Bhattacharya, D. Biswas, “Potentiality of trap charge effects and SiON induced interface defects in a-Si3N4/SiON based MIS structure for resistive NVM device”, Microelectronics Reliability 55 (2015) 789–794.

    34. 2014

  34. Partha Mukhopadhyay, Ankush Bag, Umesh Gomes, Utsav Banerjee, Saptarsi Ghosh, Sanjib Kabi, Edward Y. I. Chang, Amir Dabiran, Peter Chow, Dhrubes Biswas, “Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE”, Journal of Electronic Materials, 43 (2014) 1263-1270.

  35. Mihir Kumar Mahata, Saptarsi Ghosh, Sanjay Kumar Jana, Apurba Chakraborty, Ankush Bag, Partha Mukhopadhyay, Rahul Kumar, and Dhrubes Biswas, “Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra-thin buffer”, AIP Advances 4 (2014) 117120.

  36. Sanjay K. Jana, Partha Mukhopadhyay, Nripendra N. Halder, Sanjib Kabi, Ankush Bag, Saptarsi Ghosh and D. Biswas, “Growth and Characterization of Self-Assembled InAs Quantum Dots on Si (100) for Monolithic Integration by MBE”, IEEE Transaction on Nanotechnology, 13 (2014).

  37. Sanjay K. Jana, Partha Mukhopadhyay, Saptarsi Ghosh, Sanjib Kabi, Ankush Bag, Rahul Kumar, Dhrubes Biswas, “High-resolution X-ray diffraction analysis of AlxGa1-xN/InxGa1-xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations”, Journal of Applied Physics 115 (2014) 174507.

  38. Saptarsi Ghosh, Syed Mukulika Dinara, Partha Mukhopadhyay, Sanjay K Jana, Ankush Bag, Apurba Chakraborty, Edward Yi Chang, Dhrubes Biswas “Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors”, Applied Physics Letters 105 (2014) 073502.

  39. Saptarsi Ghosh, Ankush Bag, Sanjay K Jana, Partha Mukhopadhyay, Syed Mukulika Dinara, Sanjib Kabi, Dhrubes Biswas, “An unified analytical model for design consideration of doped cubic and undoped hexagonal AlGaN/GaN MIS gate HEMTs”, Solid-State Electronics, 96 (2014) 1-8.

Conferences

  1. Jagriti Ahuja, Ankush Bag, “"Ga-In Alloy based Nanoparticles for Deep UV Plasmonics ”, IEEE International Conference on Emerging Electronics (IEEE ICEE) IIT Delhi, India 2020 (accepted).

  2. Kanchan Singh Rana, Ankush Bag, “"Benchmarking High Power Switching Performances of Ga2O3 based Schottky Barrier Diodes with SiC Devices ”, IEEE International Conference on Power Electronics, Drives, and Energy Systems (PEDES 2020) 2020.

  3. Ashish Mishra, Ankush Bag, “"Dark Current Suppression in UV-Photodetector by β-Ga2O3-CuO Based Heterostructure ”, International Conference on Functional Materials-2020(ICFM) IIT Kharagpur, India 2020.

  4. Manoj K Yadav, Arnab Mondal, Satinder K Sharma, Ankush Bag, “Performance Evaluation of Ga2O3 Schottky Barrier Diodes on Si (100) and Si (111) using PLD and Sputtering Techniques ”, International Workshop on Physics of Semiconductor Devices(IWPSD) Kolkata, India 2019.

  5. Arnab Mondal, Manoj K Yadav, Shiv Kumar, Ankush Bag, “CVD grown Ga2O3 Based Solar Blind Deep-UV Photodetectors ”, International Workshop on Physics of Semiconductor Devices(IWPSD) Kolkata, India 2019.

  6. Shiv Kumar, Arnab Mondal, Manoj K Yadav, Ankush Bag, “Ohmic Characteristics Improvement of Au/Ti/β-Ga2O3 through Field Emission Dominating Transport of Carriers ”, International Workshop on Physics of Semiconductor Devices(IWPSD) Kolkata, India 2019.

  7. Indu Kumari, Santu Nandi, Ankush Bag, “Performance Evaluation of GaN-based Selective UV Photodetector by Varying Metal-Semiconductor-Metal Geometry ”, IEEE Electron Devices Technology and Manufacturing (EDTM) Conference Singapore, 2019.

  8. Manoj Yadav, Satinder Sharma and Ankush Bag, “Interface Trap Charge Density characterization of Au/β-Ga2O3 Schottky Barrier Diodes on Si(001) ”, International Conference in Emerging Electronics, IISC, Bangalore, India, 2018 (Best Poster Award).

  9. Arnab Mondal, Ankush Bag, “Ultraviolet to Red Photoluminescence from RF Sputtered Unintentionally Doped Ga2O3 Thin Films on Sapphire ”, Photonics 2018, IIT Delhi, New Delhi, India.

  10. Indu Kumari, Subhashis Das, Ankush Bag, “Selective UV Detection by AlGaN/GaN Based MSM Photodetector for Integration with Silicon ”, IEEE Sensors 2018, New Delhi, India.

  11. Subhashis Das, Shubhankar Majumdar, Saptarsi Ghosh, Ankush Bag, Satinder K. Sharma,and Dhrubes Biswas, “Acetone Adsorption Characteristics of Pd/ AlGaN/GaN Heterostructure Grown by PAMBE: a Kinetic Interpretation at Low Temperature ”, IEEE Sensors 2018, New Delhi, India.

  12. Subhashis Das, Ankush Bag, Saptarsi Ghosh, Satinder K. Sharma,and Dhrubes Biswas, “Effect of Si3N4 passivation on the acetone sensing performance of Pd/AlGaN/GaN heterostructure ”, XIX International Workshop on Physics of Semiconductor Devices 2017, Delhi, India.

  13. Apurba Chakraborty, Saptarsi Ghosh, Subhashis Das, Ankush Bag, and Dhrubes Biswas, “Effect of AlGaN Barrier Thickness on Trapping Characteristics in AlGaN/GaN Heterostructures ”, XIX International Workshop on Physics of Semiconductor Devices 2017, Delhi, India.

  14. Ankush Bag, Partha Mukhopadhyay and Dhrubes Biswas, “Role of Bulk Traps on Intermodulation Distortion of AlGaN/GaN HEMT”, Material Research Symposium (MRS) Fall 2015, Boston, USA.

  15. Ankush Bag, R. Kumar, S. Das, A. Chakraborty, M.K. Mahata, S. Ghosh, D. Biswas, “Uniformity and Quality of PAMBE Grown InGaN/GaN on Si(111): A Statistical Photoluminescence Study”, International Workshop on Physics of Semiconductor Devices 2015, Bangalore, India.

  16. Ankush Bag, Partha Mukhopadhyay and Dhrubes Biswas, “Exploration into the Horizontal Tunneling of Drain Current of AlGaN/GaN HEMT on Sapphire: An insight to Interface Traps”, International Conference on Nitride Semiconductors (ICNS) 2015, Beijing, China.

  17. Ankush Bag and Dhrubes Biswas, “Observation of in-situ reciprocal lattice evolution of AlGaN/InGaN on Si (111) through GaN and AlN interlayers by RHEED and Reflectance”, International Conference on Nitride Semiconductors (ICNS) 2015, Beijing, China.

  18. Ankush Bag, Palash Das, Saptarsi Ghosh, Partha Mukhopadhyay, Syed M. Dinara, Rahul Kumar, Apurba Chakraborty, Dhrubes Biswas, “Fowler-Nordheim Tunneling Contribution in AlGaN/GaN on Si (111) Schottky Barrier Current”, International Conference in Emerging Electronics, IISC, Bangalore, India, 2014 (Best Paper Award).

  19. Ankush Bag, Partha Mukhopadhyay, Saptarsi Ghosh, Palash Das, Apurba Chakraborty, Syed M. Dinara, Sanjib Kabi, Dhurbes Biswas, “Quantitative investigation into the source of current slump in AlGaN/GaN HEMT on both Si (111) and sapphire: Self-heating and trapping”, The International Conference on Condensed Matter Physics 2014, Shimla, India; DOI: 10.1063/1.4915360

  20. Ankush Bag, Partha Mukhopadhyay, Saptarsi Ghosh, Rahul Kumar, Sanjay Kumar Jana, Sanjib Kabi and Dhrubes Biswas, “Effect of Vertical and Longitudinal Electric Field on 2DEG of AlGaN/GaN HEMT on Silicon: A Qualitative Reliability Study”, International Workshop on Physics of Semiconductor Devices 2013, Noida, India. DOI 10.1007/978-3-319-03002-9_19.

  21. Ankush Bag, Partha Mukhopadhyay, Saptarsi Ghosh, Rahul Kumar, Apurba Chakraborty, Syed Mukulika Dinara, Sanjib Kabi and Dhrubes Biswas, “Effect of Longitudinal Electric Field and Self Heating of Channel on Linearity and Gain of AlGaN/GaN HEMT on Sapphire (0001)” IEEE TechSym 2014, IIT Kharagpur, India. DOI:10.1109/TechSym.2014.6808083.

  22. Partha Mukhopadhyay, Rahul Kumar, Ankush Bag, Saptarsi Ghosh, Sanjay K Jana, Sanjib Kabi and Dhrubes Biswas, “Effect of Growth Temperature Variation on Crystalline Quality of AlGaAs/InGaAs Hetero-interface”, Molecular Beam Epitaxy 2014, Flagstaff, USA.

  23. Saptarsi Ghosh, Ankush Bag, Partha Mukhopadhyay, Syed Mukulika Dinara, Sanjay .K. Jana, Sanjib Kabi, and Dhrubes Biswas, “Threading Dislocations in GaN HEMTs on Silicon: Origin of Large Time Constant Transients?”, CSMantech 2014, Denver, USA.

  24. Mihir Mahata, Saptarsi Ghosh, Sanjay Jana, Partha Mukhopadhyay,Ankush Bag, Mukulika Dinara, Rahul Kumar, Subhashis Das, Apurbo Chakrabarty, “Growth and characterization of Al0.15Ga0.85As/GaAs pseudomorphic heterostructure by MBE”, IEEE TechSym 2014, IIT Kharagpur.

  25. Syed Mukulika Dinara, Ankush Bag, Sekhar Bhattacharya, P. Banerji and D. Biswas, “The Charge Trapping Effect in Amorphous Silicon Nitride (Si3N4) Thin Film Based MIS Device”, ISJPS-2013, IIT Kharagpur, India.